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IRG4BC10SD 4/24/2000 www.irf.com 1 insulated gate bipolar transistor with ultrafast soft recovery diode features e g n-channel c v ces = 600v v ce(on) typ. = 1.10v @v ge = 15v, i c = 2.0a standard speed copack igbt ? extremely low voltage drop 1.1vtyp. @ 2a s-series: minimizes power dissipation at up to 3 khz pwm frequency in inverter drives, up to 4 khz in brushless dc drives. very tight vce(on) distribution igbt co-packaged with hexfred tm ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations industry standard to-220ab package benefits generation 4 igbts offer highest efficiencies available igbts optimized for specific application conditions hexfred diodes optimized for performance with igbts . minimized recovery characteristics require less/no snubbing lower losses than mosfet's conduction and diode losses t o -22 0 ab parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25 c continuous collector current 14 i c @ t c = 100 c continuous collector current 8.0 i cm pulsed collector current 18 a i lm clamped inductive load current 18 i f @ t c = 100 c diode continuous forward current 4.0 i fm diode maximum forward current 18 v ge gate-to-emitter voltage 20 v p d @ t c = 25 c maximum power dissipation 38 p d @ t c = 100 c maximum power dissipation 15 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 10 lbf in (1.1 n m) parameter min. typ. max. units r jc junction-to-case - igbt ??? ??? 3.3 r jc junction-to-case - diode ??? ??? 7.0 c/w r cs case-to-sink, flat, greased surface ??? 0.50 ??? r ja junction-to-ambient, typical socket mount ??? ??? 80 wt weight ??? 2.0(0.07) ??? g (oz) thermal resistance absolute maximum ratings w

IRG4BC10SD 2 www.irf.com switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 ?? vv ge = 0v, i c = 250a ? v (br)ces / ? t j temperature coeff. of breakdown voltage ? 0.64 ? v/ cv ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage ? 1.58 1.7 i c = 8.0a v ge = 15v ? 2.05 ? vi c = 14.0a see fig. 2, 5 ? 1.68 ? i c = 8.0a, t j = 150 c v ge(th) gate threshold voltage 3.0 ? 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j temperature coeff. of threshold voltage ? -9.5 ? mv/ cv ce = v ge , i c = 250a g fe forward transconductance 3.65 5.48 ? sv ce = 100v, i c =8.0a i ces zero gate voltage collector current ?? 250 a v ge = 0v, v ce = 600v ?? 1000 v ge = 0v, v ce = 600v, t j = 150 c v fm diode forward voltage drop ? 1.5 1.8 v i c =4.0a see fig. 13 ? 1.4 1.7 i c =4.0a, t j = 150 c i ges gate-to-emitter leakage current ?? 100 na v ge = 20v electrical characteristics @ t j = 25 c (unless otherwise specified) details of note through are on the last page q g total gate charge (turn-on) ? 15 22 i c = 8.0a qge gate - emitter charge (turn-on) ? 2.42 3.6 nc v cc = 400v see fig. 8 q gc gate - collector charge (turn-on) ? 6.53 9.8 v ge = 15v t d(on) turn-on delay time ? 76 ? t j = 25 c t r rise time ? 32 ? ns i c = 8.0a, v cc = 480v t d(off) turn-off delay time ? 815 1200 v ge = 15v, r g = 100 ? t f fall time ? 720 1080 energy losses include "tail" and e on turn-on switching loss ? 0.31 ? diode reverse recovery. e off turn-off switching loss ? 3.28 ? mj see fig. 9, 10, 18 e ts total switching loss ? 3.60 10.9 e ts total switching loss ? 1.46 2.6 mj i c = 5.0a t d(on) turn-on delay time ? 70 ? t j = 150 c, see fig. 10,11, 18 t r rise time ? 36 ? ns i c = 8.0a, v cc = 480v t d(off) turn-off delay time ? 890 ? v ge = 15v, r g = 100 ? t f fall time ? 890 ? energy losses include "tail" and e ts total switching loss ? 3.83 ? mj diode reverse recovery. l e internal emitter inductance ? 7.5 ? nh measured 5mm from package c ies input capacitance ? 280 ? v ge = 0v c oes output capacitance ? 30 ? pf v cc = 30v see fig. 7 c res reverse transfer capacitance ? 4.0 ?? = 1.0mhz t rr diode reverse recovery time ? 28 42 ns t j = 25 c see fig. ? 38 57 t j = 125 c 14 i f =4.0a i rr diode peak reverse recovery current ? 2.9 5.2 a t j = 25 c see fig. ? 3.7 6.7 t j = 125 c 15 v r = 200v q rr diode reverse recovery charge ? 40 60 nc t j = 25 c see fig. ? 70 105 t j = 125 c 16 di/dt = 200a/s di (rec)m /dt diode peak rate of fall of recovery ? 280 ? a/s t j = 25 c see fig. during t b ? 235 ? t j = 125 c 17 parameter min. typ. max. units conditions
IRG4BC10SD www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 0.5 1.0 1.5 2.0 2.5 3.0 v , collector-to-emitter voltage (v) i , collector current (a) ce c v = 15v 80 s pulse width ge t = 25 c j t = 150 c j 1 10 100 6 8 10 12 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5 s pulse width cc t = 25 c j t = 150 c j 5s pulse width 0.1 1 10 100 0.0 2.0 4.0 6.0 8.0 10.0 f, frequency (khz) load current (a) 60% of rated volta ge i ideal diodes square wave: for both: duty cycle: 50% t = 125 c t = 90 c gate drive as specified sink j power dissipation = w 9.2
IRG4BC10SD 4 www.irf.com fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - typical collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) -60 -40 -20 0 20 40 60 80 100 120 140 160 1.00 1.50 2.00 2.50 3.00 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 16 c i = a 8 c i = a 4 c 25 50 75 100 125 150 0 4 8 12 16 t , case temperature ( c) maximum dc collector current(a) c
IRG4BC10SD www.irf.com 5 0 20 40 60 80 100 3.30 3.35 3.40 3.45 3.50 3.55 3.60 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 8a cc ge j c fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature r g , gate resistance ( ?) 0 5 10 15 20 0 5 10 15 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 8a cc c 1 10 100 0 100 200 300 400 500 v , collector-to-emitter volta g e (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies g e g c , ce res g c oes ce g c c ies c oes c res -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 100 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 16 c i = a 8 c i = a 4 c 100 ?
IRG4BC10SD 6 www.irf.com 1 10 100 1 10 100 1000 v = 20v t = 125 c ge j o safe operating area v , collector-to-emitter voltage (v) i , collector current (a) ce c fig. 11 - typical switching losses vs. collector current fig. 12 - turn-off soa 0 4 8 12 16 20 0 3 6 9 12 15 i , collector current (a) total switching losses (mj) c r = 100 t = 150 c v = 480v v = 15v g j cc ge 100 ? 0.1 1 10 100 0.0 1.0 2.0 3.0 4.0 5.0 6.0 fm forward volta g e drop - v ( v ) t = 150 c t = 125 c t = 25 c j j j forward voltage drop - v fm ( v ) instantaneous forward current ( a ) fig. 13 - maximum forward voltage drop vs. instantaneous forward current
IRG4BC10SD www.irf.com 7 fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt, fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt di (rec) m/dt- (a /s) qrr- (nc) irr- ( a) trr- (nc) 20 25 30 35 40 45 50 100 1000 f di /dt - ( a/ s ) i = 8.0a i = 4.0a f f v = 200v t = 125 c t = 25 c r j j 0 2 4 6 8 10 12 14 100 1000 f i = 8.0a i = 4.0a v = 200v t = 125 c t = 25 c r j j di /dt - ( a/ s ) f f 0 40 80 120 160 200 100 1000 f di /dt - ( a/ s ) i = 8.0a i = 4.0a v = 200v t = 125 c t = 25 c r j j f f 100 1000 100 1000 f di /dt - ( a/ s ) a i = 8.0a i = 4.0a v = 200v t = 125 c t = 25 c r j j f f
IRG4BC10SD 8 www.irf.com same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery w aveforms ic vpk 10% vcc irr 10% irr vcc trr qrr = trr tx id dt fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr vd ic dt vce ic dt ic dt t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% c i c e on e off ts on off e = (e +e ) v v ge
IRG4BC10SD www.irf.com 9 v g gate signal device under tes t current d.u.t. voltage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25 c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
IRG4BC10SD 10 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 100w (figure 19) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot.
0.55 (.022) 0.46 (.018) 3 x 2.92 (.115) 2.64 (.104) 1.32 (.052) 1.22 (.048) - b - 4.69 (.185) 4.20 (.165) 3.78 (.149) 3.54 (.139) - a - 6.47 (.255) 6.10 (.240) 1.15 (.045) m in 4.06 (.160) 3.55 (.140) 3 x 3.96 ( .160 ) 3.55 ( .140 ) 3 x 0.93 ( .037 ) 0.69 ( .027 ) 0.36 (.014) m b a m 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1.40 (.055) 1.15 (.045) 3 x 2.54 (.100) 2x 1 2 3 4 conforms to jedec outline to-220ab d im e ns io ns in m illim e ters a nd ( inches ) lead assignments 1 - g a te 2 - c o lle c to r 3 - em it te r 4 - c o lle c to r notes: 1 dimensions & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 d im e n s io n s a r e s h o w n m illim e te r s ( inches ) . 4 conforms to jedec outline to-220ab. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional centre: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 4/00

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